DMP2069UFY4Q document number: ds37106 rev. 1 - 2 1 of 6 www.diodes.com april 2014 ? diodes incorporated DMP2069UFY4Q new product p-channel enhancem ent mode mosfet product summary v (br)dss r ds(on) max i d max t a = +25c -20v 54m ? @ v gs = -4.5v -2.5a 90m ? @ v gs = -1.8v -1.8a description and applications this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. ? backlighting ? power management functions ? dc-dc converters features and benefits ? low on-resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? esd protected up to 3kv ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: x2-dfn2015-3 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? terminals connections: see diagram below ? weight: 0.008 grams (approximate) ordering information (note 4 & 5) part number compliance case packaging DMP2069UFY4Q-7 automotive x2-dfn2015-3 3,000/tape & reel notes: 1. no purposely added lead. fully eu directive 2002 /95/ec (rohs) & 2011/65/ eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec-q101 qualified and are ppap c apable. automotive, aec-q101 and standard products are electricall y and thermally the same, except where specified. for more information, please refer to http://www .diodes.com/quality/product_grade_definitions/. 5. for packaging details, go to our websit e at http://www.diodes.com /products/packages.html. marking information date code key year 2009 2010 2011 2012 2013 2014 2015 code w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d esd protected to 3kv top view internal schematic bottom view d s g 29p = marking code ym = date code marking y = year (ex: w = 2009) m = month (ex: 9 = september) 29p ym x2-dfn2015-3 e4
DMP2069UFY4Q document number: ds37106 rev. 1 - 2 2 of 6 www.diodes.com april 2014 ? diodes incorporated DMP2069UFY4Q new product maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss -20 v gate-source voltage v gss 8 v continuous drain current (note 6) steady state t a = +25c t a = +70c i d -2.5 -2.2 a pulsed drain current (note 7) i dm -12 a thermal characteristics characteristic symbol value unit power dissipation (note 6) p d 0.53 w thermal resistance, junction to ambient @t a = +25c r ja 231 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics @t a = +25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 8) drain-source breakdown voltage bv dss -20 ? ? v v gs = 0v, i d = -250a zero gate voltage drain current t j = +25 c i dss ? ? -1.0 a v ds = -20v, v gs = 0v gate-source leakage i gss ? ? 10 a v gs = 8v, v ds = 0v on characteristics (note 8) gate threshold voltage v gs(th) -0.3 -0.55 -1.0 v v ds = v gs , i d = -250a static drain-source on-resistance r ds(on) ? 36 54 m ? v gs = -4.5v, i d = -2.5a 46 69 v gs = -2.5v, i d = -2.2a 60 90 v gs = -1.8v, i d = -2.0a forward transfer admittance |y fs | ? 8 ? s v ds = -5v, i d = -2.5a dynamic characteristics (note 9) input capacitance c iss ? 214 ? pf v ds = -10v, v gs = 0v f = 1.0mhz output capacitance c oss ? 104 ? pf reverse transfer capacitance c rss ? 25 ? pf gate resistnace r g ? 250 ? ? v ds = 0v, v gs = 0v, f = 1.0mhz switching characteristics (note 9) total gate charge q g ? 9.1 ? nc v gs = -4.5v, v ds = -10v, i d = -4a gate-source charge q gs ? 1.5 ? nc gate-drain charge q gd ? 1.7 ? nc turn-on delay time t d(on) ? 80.4 160 ns v ds = -10v, v gs = -4.5v, r d = 2.5 , r g = 3.0 turn-on rise time t r ? 155.1 210 ns turn-off delay time t d(off) ? 688.1 1376 ns turn-off fall time t f ? 423.8 848 ns notes: 6. device mounted on fr-4 pcb with minimum recommended pad layout. 7. repetitive rating, pulse width limited by junction temperature. 8. short duration pulse test used to minimize self-heating effect. 9. guaranteed by design. not subject to production testing.
DMP2069UFY4Q document number: ds37106 rev. 1 - 2 3 of 6 www.diodes.com april 2014 ? diodes incorporated DMP2069UFY4Q new product 0 5 10 15 20 01 2 3 45 fig. 1 typical output characteristic v , drain-source voltage (v) ds i, d r ain c u r r en t (a) d v = 2.0v gs v = 3.0v gs v = 3.5v gs v = 4.5v gs v = 2.5v gs v = 1.5v gs v = 1.2v gs v = 1.8v gs 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 3.5 4 fig. 2 typical transfer characteristic v , gate-source voltage (v) gs i, d r ain c u r r en t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 5v ds 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0 5 10 15 20 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , drain-source on-resistance ( ) ds(on) v = 4.5v gs v = 2.5v gs v = 1.8v gs v = 1.5v gs 0 0.02 0.04 0.06 0.08 0 5 10 15 20 i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0.5 0.7 0.9 1.1 1.3 1.5 1.7 fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance (normalized) dson v = 4.5v i = 10a gs d v = 2.5v i = 5a gs d 0 0.02 0.04 0.06 0.08 0.10 fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance ( ) dson v = 4.5v i = 10a gs d v = 2.5v i = 5a gs d
DMP2069UFY4Q document number: ds37106 rev. 1 - 2 4 of 6 www.diodes.com april 2014 ? diodes incorporated DMP2069UFY4Q new product 0 0.2 0.4 0.6 0.8 1.0 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) i = 250a d i = 1ma d 0.2 0.4 0.6 0.8 1.0 1.2 1.4 fig. 8 diode forward voltage vs. current v , source-drain voltage (v) sd 0 2 4 6 8 10 12 14 16 18 20 i, s o u r c e c u r r en t (a) s t = 25c a 10 100 1,000 10,000 0 5 10 15 20 fig. 9 typical capacitance v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) c iss c oss c rss f = 1mhz 0 5 10 15 20 fig. 10 typical leakage current vs. drain-source voltage v , drain-source voltage (v) ds 1 10 100 1,000 10,000 100,000 i, leaka g e c u r r en t (na) dss t = 25c a t = 85c a t = 125c a t = 150c a 0.00001 0.001 0.01 0.1 1 10 100 1,000 fig. 11 transient thermal response t , pulse duration time (s) 1 0.0001 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 235c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5
DMP2069UFY4Q document number: ds37106 rev. 1 - 2 5 of 6 www.diodes.com april 2014 ? diodes incorporated DMP2069UFY4Q new product package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. x2-dfn2015-3 dim min max typ a ? 0.40 ? a1 0 0.05 0.02 a3 ? ? 0.13 b 0.20 0.30 0.25 d ? ? 0.30 d 1.45 1.575 1.50 d2 1.00 1.20 1.10 e ? ? 0.50 e 1.95 2.075 2.00 e2 0.70 0.90 0.80 f ? ? 0.60 l 0.25 0.35 0.30 z ? ? 0.125 all dimensions in mm dimensions value (in mm) c 1.00 g 0.15 x 0.31 x1 1.30 y 0.50 y1 1.00 y2 0.65 x1 x c y y1 g y2 x seating plane a a3 a1 d2 e2 b d e z l e d f
DMP2069UFY4Q document number: ds37106 rev. 1 - 2 6 of 6 www.diodes.com april 2014 ? diodes incorporated DMP2069UFY4Q new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2014, diodes incorporated www.diodes.com
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